NCE1520K mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 150V,ID =20A RDS(ON) <80mΩ @ VGS=10V (Typ:65mΩ) RDS(ON) <90mΩ @ VGS=7V (Typ:70mΩ)
* High density cell design for ultra low Rdson
* Fully characterized.
General Features
* VDS = 150V,ID =20A RDS(ON) <80mΩ @ VGS=10V (Typ:65mΩ) RDS(ON) <90mΩ @ VGS=7V (Typ:70mΩ)
* H.
The NCE1520K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 150V,ID =20A RDS(ON) <80mΩ @ VGS=10V (Typ:65mΩ) RDS(ON) <90mΩ @.
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